Qualcomm has officially announced its next-gen flagship processor, the Snapdragon 835, in New York at the Qualcomm Snapdragon Technology Summit. The chipmaker has teamed up with Samsung Electronics to develop the new chip which is built on 10nm FinFET node that entered mass production in October.
Samsung’s new 10nm FinFET process, for instance, allows up to a 30 percent increase in area efficiency with a 27 percent improvement in performance or up to 40 percent less power consumption compared to the previous version. These process improvements, combined with a more advanced chip design, can create significant battery life enhancements.
Keith Kressin, senior vice president, product management, Qualcomm Technologies Inc. said:
“We are excited to continue working together with Samsung in developing products that lead the mobile industry. Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”
The next gen Snapdragon 835 processor comes with Quick Charge 4.0 fast charging technology, which supports up to 20% faster or 30% more efficient charging than Qualcomm’s last-gen Quick Charge 3.0 technology.
The chipmaker is claiming that with just 5 minutes of charging, Quick Charge 4.0 can charge your phone’s battery to offer 5 hours worth of battery life which is impressive. Also you can expect to charge your battery to 50% in just 15 minutes. Also for those who are worried about quick charge generating heat, the new technology runs 5 degrees cooler than before.
Qualcomm Snapdragon 835 key specs:
- 4 x Kryo 280 Performance CPUs at 2.45GHz, 4 x Kryo 280 Efficiency CPUs at 1.90GHz, 64-bit CPU Bit Architecture, 10nm Process Technology
- Integrated X16 LTE modem with Global Mode
- LTE Cat 16/13 speeds of up to 1Gbps down/150 Mbps up via 4×20 MHz carrier aggregation, Up to 256-QAM downlink; Qualcomm Snapdragon Upload+, 2×20 MHz carrier aggregation and Up to 64-QAM uplink
- LTE Dual SIM Dual Standby, VoLTE with SRVCC to 3G and 2G, HD and Ultra HD Voice (EVS), CSFB to 3G and 2G
- Snapdragon All Mode with support for all seven cellular modes plus LTE-U and LAA
- Support for Qualcomm TruSignal with carrier aggregation
- Qualcomm Adreno 540 GPU, OpenGL ES 3.2, OpenCL 2.0 full, Vulkan, DX12
- Supports up to 4K Ultra HD on-device, 4K Ultra HD output, Display Port, HDMI, USB 3.1, USB Type-C support
- Up to 4K UltraHD capture @ 30 fps, Up to 4K UltraHD playback @ 60 fps, H.264 (AVC), H.265 (HEVC), VP9
- Qualcomm Aqstic audio codec, and speaker amplifier, Qualcomm® aptX™ audio playback support: aptX Classic, aptX HD
- Up to 32MP single camera, Up to 16MP dual camera, Qualcomm Spectra 180 Image Sensor Processor (14-bit dual-ISP)
- Qualcomm Clear Sight camera features, Hybrid Autofocus, Optical Zoom, hardware-accelerated Face Detection, HDR Video Recording
- Hexagon 682 DSP with Hexagon Vector eXtensions and Qualcomm All-Ways Aware technology, TensorFlow and Halide support, Snapdragon Neural Processing Engine (NPE) SDK
- 1 Gear3 2L, SD 3.0 (UHS-I), LPDDR4x 1866MHz dual-channel memory
- 802.11ad Multi-gigabit, Integrated 802.11ac 2×2 with MU-MIMO, 2.4GHz, 5GHz and 60GHz, Bluetooth 5.0, NFC
- Qualcomm Location, Supports GPS, Glonass, BeiDou, Galileo and QZSS systems content protection
- Qualcomm Quick Charge 4.0
The latest SoC is in production now and expected to ship in commercial devices in the first half of 2017. Snapdragon 835 follows the Snapdragon 820/821 processor, which has over 200 designs in development.
(Last Update: 04/01/2017)